| PART |
Description |
Maker |
| TPC8402 |
TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (MOSVI/U−MOSII)
TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (MOSVI/U-MOSII)
TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (MOSVI/U−MOSII)
TOSHIBA Field Effect Transistor Silicon N/ P Channel MOS Type (MOSVI/U−MOSII)
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
| 2SK184 |
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
|
Toshiba Semiconductor
|
| SSM6J402TU |
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
|
Toshiba Semiconductor
|
| 2SK3762 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
|
Toshiba Semiconductor
|
| TPCA8A04-H |
TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode
|
Toshiba Semiconductor
|
| SSM6N04FU |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
|
TOSHIBA[Toshiba Semiconductor]
|
| SSM3J02F |
600 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
| TPC8105-H |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U-MOSII)
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U−MOSII)
|
Toshiba Semiconductor
Toshiba Corporation
|
| SSM3J135TU-14 |
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI)
|
Toshiba Semiconductor
|
| TPC8114 |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIV)
|
Toshiba Semiconductor
|
| 2SK3374 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV)
|
Toshiba Semiconductor
Panasonic
|
| 2SK3130 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (ヰ-MOSV)
|
TOSHIBA[Toshiba Semiconductor]
|
